//---------------------------------------------------- //Copyright (C), 2004-2009, lst. //版权所有 (C), 2004-2009, lst. //所属模块: 文件系统芯片驱动 //作者：lst //版本：V1.0.0 //文件描述: 用于三星nand flash的文件系统驱动模块 //其他说明: //修订历史: //2. ... //1. 日期: 2009-03-10 // 作者: lst // 新版本号: V1.0.0 // 修改说明: 移植自yf44b0 //------------------------------------------------------ #ifndef _samsung_nand_H_ #define _samsung_nand_H_ #ifdef __cplusplus extern "C" { #endif #define cn_oob_size 16 #define cn_reserve_blocks 0 //定义一个保留区，紧跟MDR表 //下面定义各操作等待时间，单位微秒 #define cn_wait_address_ready 10 #define cn_wait_page_write 200 #define cn_wait_block_erase 2000 #define cn_wait_reset 500 //ecc校验操作结果 #define cn_all_right_verify 0 //完全正确 #define cn_ecc_right_verify 1 //经ecc纠正正确 #define cn_ecc_error_verify 2 //错误，不能纠正 #define cn_other_error_verify cn_limit_uint32 //其他错误，一般是非法参数 struct nand_reg //地址：0x4e000000 { uint16_t NFCONF; // 0x4e000000 NAND Flash configuration uint16_t revs0; uint16_t NFCONT; // 0x4e000004 uint16_t revs1; uint16_t NFCMD ; // 0x4e000008 NADD Flash command uint16_t revs2; uint16_t NFADDR; // 0x4e00000c NAND Flash address uint16_t revs3; uint8_t NFDATA; // 0x4e000010 NAND Flash data uint8_t revs30; uint8_t revs31; uint8_t revs32; uint32_t NFMECCD0 ; // 0x4e000014 NAND Flash ECCD0 uint32_t NFMECCD1 ; // 0x4e000018 NAND Flash ECCD1 uint32_t NFSECCD ; // 0x4e00001C NAND Flash SPARE AREA ECC REGISTER uint16_t NFSTAT; // 0x4e000020 NAND Flash operation status uint16_t revs4; uint32_t NFESTAT0; // 0x4e000024 NAND flash ECC status for I/O[7:0] uint32_t NFESTAT1; // 0x4e000028 NAND flash ECC status for I/O[15:8] uint32_t NFMECC0; // 0x4e00002c NAND flash main area ECC0 status uint32_t NFMECC1; // 0x4e000030 NAND flash main area ECC1 status uint32_t NFSECC; // 0x4e000034 NAND flash spare area ECC status uint32_t NFSBLK; // 0x4e000038 NAND flash start block address uint32_t NFEBLK; // 0x4e00003c NAND flash end block address }; #define nand_ce_bit (0x40) #define nand_busy_bit (0x20) #define nand_cle_bit (0x80) #define nand_ale_bit (0x100) // HCLK=100Mhz #define cn_talcs 1 //1clk(10ns) #define cn_twrph0 4 //3clk(30ns) #define cn_twrph1 0 //1clk(10ns) //cn_talcs+cn_twrph0+cn_twrph1>=50ns // HCLK=50Mhz //#define cn_talcs 0 //1clk(20ns) //#define cn_twrph0 1 //2clk(40ns) //#define cn_twrph1 0 //1clk(20ns) #define ce_active() (pg_nand_reg->NFCONT &= ~(1<<1)) #define ce_inactive() (pg_nand_reg->NFCONT |= (1<<1)) #define CN_FS_BUF_TICKS (1000) //文件自动写入时间,降低掉电损失 #define CN_FS_BUF_BLOCKS (16) //文件缓冲块数, // Flash commands: #define cn_nand_select_page0 0x00 #define cn_nand_select_page1 0x01 #define cn_nand_select_oob 0x50 #define cn_nand_reset 0xff #define cn_nand_page_program 0x80 #define cn_nand_startup_write 0x10 #define cn_nand_block_erase 0x60 #define cn_nand_startup_erase 0xd0 #define cn_nand_read_status 0x70 #define cn_nand_read_id 0x90 #define cn_nand_failure 0x01 #define RB 0x40 struct nand_table { uint16_t vendor_chip_id; u16 oob_size; uint16_t pages_per_block; uint32_t blocks_sum; uint32_t block_size; char *chip_name; }; void __read_sector_and_oob(uint32_t sector,uint8_t *data); bool_t write_PCRB_nand(uint32_t PCRB_block, uint32_t protected_block,uint8_t *buf); bool_t restore_PCRB_nand(uint32_t PCRB_block,uint32_t *restored); bool_t __wait_ready_nand(void); bool_t __wait_ready_nand_slow(uint16_t wait_time); void __write_command_nand(uint8_t val); uint32_t __read_sector_nand_no_ecc(uint32_t sector,uint32_t offset, uint8_t *data,uint32_t size); uint32_t read_block_ss_no_ecc(uint32_t block,uint32_t offset, uint8_t *buf,uint32_t size); uint32_t __correct_sector(uint8_t *data,const uint8_t *old_ecc); uint32_t __read_sector_nand_with_ecc(uint32_t sector,uint32_t offset, uint8_t *data,uint32_t size); uint32_t read_block_ss_with_ecc(uint32_t block,uint32_t offset, uint8_t *buf,uint32_t size); uint8_t __read_status_nand(void); uint32_t __write_sector_nand_no_ecc(uint32_t sector,uint32_t offset, uint8_t *data,uint32_t size); uint32_t write_block_ss_no_ecc(uint32_t block,uint32_t offset, uint8_t *buf,uint32_t size); uint32_t __write_sector_nand_with_ecc(uint32_t sector,uint32_t offset, uint8_t *data,uint32_t size); uint32_t write_block_ss_with_ecc(uint32_t block,uint32_t offset, uint8_t *buf,uint32_t size); bool_t erase_block_nand(uint32_t block_no); bool_t __erase_all_nand(void); bool_t query_block_ready_ss_with_ecc(uint32_t block,uint32_t offset, uint8_t *buf,uint32_t size); bool_t query_block_ready_nand_no_ecc(uint32_t block,uint32_t offset, uint8_t *buf,uint32_t size); bool_t query_ready_with_data_nand(uint8_t *new_data,uint8_t *org_data, uint32_t size); bool_t check_block_nand(uint32_t block_no); bool_t __mark_invalid_block(uint32_t block); uint32_t __check_all_ss(void); void __make_sector_ecc(const uint8_t *data,uint8_t *ecc); uint16_t __read_chip_id (void); bool_t __parse_chip(uint16_t id,char **name); void __reset_nand(void); bool_t module_init_fs_nandflash(void); #ifdef __cplusplus } #endif #endif // _samsung_nand_H_